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| SI6423DQ New Product Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.0085 @ VGS = - 4.5 V - 12 0.0106 @ VGS = - 2.5 V 0.014 @ VGS = - 1.8 V D TrenchFETr Power MOSFET ID (A) - 9.5 - 8.5 - 7.5 APPLICATIONS D Load Switch S* TSSOP-8 D S S G 1 2 3 4 Top View Ordering Information: SI6423DQ SI6423DQ-T1 (with Tape and Reel) D P-Channel MOSFET D 8D 7S 6S 5D G * Source Pins 2, 3, 6 and 7 must be tied common. ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS 10 secs - 12 "8 - 9.5 Steady State Unit V - 8.2 - 6.5 - 30 A - 0.95 1.05 0.67 - 55 to 150 W _C ID IDM IS PD TJ, Tstg -8 - 1.35 1.5 1.0 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 72257 S-31419--Rev. A, 07-Jul-03 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 60 100 35 Maximum 83 120 45 Unit _C/W C/W 1 SI6423DQ Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = - 400 mA VDS = 0 V, VGS = "8 V VDS = - 9.6 V, VGS = 0 V VDS = - 9.6 V, VGS = 0 V, TJ = 70_C VDS - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 9.5 A Drain-Source On-State Resistancea rDS(on) VGS = - 2.5 V, ID = - 8.5 A VGS = - 1.8 V, ID = - 7.5 A Forward Transconductancea gfs VSD VDS = - 15 V, ID = - 9.5 A IS = - 1.3 A, VGS = 0 V - 20 0.0068 0.0085 0.0112 45 - 0.58 - 1.1 0.0085 0.0106 0.014 S V W - 0.40 - 0.8 "100 -1 - 10 V nA mA A Symbol Test Condition Min Typ Max Unit Diode Forward Voltagea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = - 1.3 A, di/dt = 100 A/ms VDD = - 6 V, RL = 6 W ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W VDS = - 6 V, VGS = - 5 V, ID = - 9.5 A 74 9.0 19 3.6 50 75 270 200 160 75 110 400 300 250 ns W 110 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 5 thru 2 V 24 I D - Drain Current (A) 24 I D - Drain Current (A) 30 Transfer Characteristics 1.5 V 18 18 12 12 TC = 125_C 6 25_C - 55_C 6 0 0 1 2 3 4 5 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VDS - Drain-to-Source Voltage (V) www.vishay.com VGS - Gate-to-Source Voltage (V) Document Number: 72257 S-31419--Rev. A, 07-Jul-03 2 SI6423DQ New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.030 r DS(on) - On-Resistance ( W ) 8000 Vishay Siliconix Capacitance 0.018 VGS = 1.8 V 0.012 VGS = 2.5 V 0.006 VGS = 4.5 V C - Capacitance (pF) 0.024 6400 Ciss 4800 3200 Coss Crss 1600 0.000 0 6 12 18 24 30 0 0 2 4 6 8 10 12 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) VDS = 6 V ID = 9.5 A 4 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 9.5 A 1.4 3 r DS(on) - On-Resistance (W) (Normalized) 30 45 60 75 1.2 2 1.0 1 0.8 0 0 15 Qg - Total Gate Charge (nC) 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 30 TJ = 150_C r DS(on) - On-Resistance ( W ) 10 I S - Source Current (A) 0.06 On-Resistance vs. Gate-to-Source Voltage 0.05 0.04 ID = 9.5 A 0.03 1 TJ = 25_C 0.02 0.01 0.1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72257 S-31419--Rev. A, 07-Jul-03 www.vishay.com 3 SI6423DQ Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 60 Single Pulse Power, Junction-to-Ambient 0.4 V GS(th) Variance (V) ID = 400 mA 0.2 50 40 Power (W) 30 0.0 20 - 0.2 10 - 0.4 - 50 - 25 0 25 50 75 100 125 150 0 10 -2 10 -1 1 Time (sec) 10 100 TJ - Temperature (_C) Safe Operating Area, Junction-to-Case 100 Limited by rDS(on) 1 ms 10 I D - Drain Current (A) 10 ms 100 ms 1s 10 s 0.1 TC = 25_C Single Pulse dc 1 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 100_C/W t1 t2 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 72257 S-31419--Rev. A, 07-Jul-03 SI6423DQ New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Vishay Siliconix 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72257 S-31419--Rev. A, 07-Jul-03 www.vishay.com 5 |
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